Memorii DDR3

[Rabbit]

Primele astfel de jucării, marca Elpida, trimise lui Intel să le testeze. 1066 MHz, 1.5V.

[korby]

Se pare că aceste memorii vor avea 240 de pini, la fel ca memoriile DDR2, însă "cheia" va fi poziţionată altfel, precum şi voltajul de alimentare care va fi scăzut până la 1,5V. Totuşi, latenţele nu sunt deocamdată foarte plăcute, vehiculându-se frecvenţe de 1333 MHz cu CL8 şi 1666MHz cu CL9.

[Velkan]

DDR3 SDRAM: Revolution or Evolution? @ xbitlabs.com

[bausto]

OCZ Releases New 1800MHz Memory Modules.

At 1800MHz, OCZ DDR3 PC3-14400 Platinum Editionis rated to run with CL8 8-8-27 latency settings at 1.9V voltage. The new modules feature a good balance of relatively low timings and extremely high clock-speeds. In order to achieve enhanced performance, OCZ had to increase the voltage by 26% from 1.5V nominal for DDR3, which is a substantial boost.

[Velkan]

DDR3 Accelerates: DDR3-1800 SDRAM Roundup @ xbitlabs.com

[Velkan]

DDR3-1333 Speed and Latency Shootout @ tomshardware.com

[Foxter]

4GB DDR3-1600 in LGA775 Systems: New Look.

[bausto]

Samsung Claims Title of World's Highest Density DRAM Chip.

[bausto]

Samsung Ships Advanced 16GB DDR3.

Samsung's advanced DDR3 chips offer higher performance with lower power needs.

[bausto]

Micron and Nanya to Start Making DDR3 Using 42nm Process Technology.

By shrinking process technology, the new 2Gb 42nm DDR3 device delivers improved memory performance capable of reaching up to 1866MHz. In addition, the small die size coupled with the 2Gb density of the 42nm DDR3 device enables modules up to 16GBs.

The new 42nm process now makes 1.35V the standard, mainstream voltage requirement, compared to 1.5V with previous generations. With increasing memory requirements in servers, it has been estimated that memory power consumption can be up to 21W per module. The 1.35V can provide a savings of up to 30% in server applications, reducing both power and cooling requirements.